HIT 2SJ361 Datasheet
2SJ361
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 2.5 V gate drive device can be driven from 3 V source
Outline
UPAK
G
1
2
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
2SJ361
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5×20×0.7 mm)
3. Marking is “RY”.
–20 V
±20 V
–2 A
–4 A
–2 A
1W
2
2SJ361
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R
GSS
DSS
GS(off)
DS(on)
resistance — 0.85 1.5 Ω ID = –0.4 A, VGS = –2.5 V
Forward transfer admittance |yfs| 0.15 0.3 — S ID = –1 A, VDS = –10 V
Input capacitance Ciss — 3.2 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 130 — pF f = 1 MHz
Reverse transfer capacitance Crss — 0.6 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
–20 — — V ID = –10 mA, VGS = 0
±20——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±16 V, VDS = 0
— — –10 µAVDS = –16 V, VGS = 0
–0.5 — –1.5 V ID = –1 mA, VDS = –10 V
— 0.28 0.4 Ω ID = –1 A, VGS = –10 V
— 350 — ns ID = –1 A, VGS = –10 V,
— 1650 — ns RL = 10 Ω
— 7280 — ns
— 6950 — ns
— –1.0 — V IF = –2 A, VGS = 0
— 530 — ns IF = –2 A, VGS = 0,
di
/dt = 20 A/µs
F
3
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