HIT 2SJ352, 2SJ351 Datasheet
2SJ351, 2SJ352
Silicon P-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SK2220, 2SK2221
Features
• High power gain
• Excellent frequency response
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
ADE-208-143
1st. Edition
Ordering Information
Type No. V
2SJ351 –180 V
2SJ352 –200 V
DSX
2SJ351, 2SJ352
Outline
TO-3P
D
G
S
1
2
3
1. Gate
2. Source
(Flange)
3. Drain
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SJ351 V
DSX
2SJ352 –200
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
GSS
D
DR
1
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
–180 V
±20 V
–8 A
–8 A
100 W
2
2SJ351, 2SJ352
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SJ351 V
(BR)DSX
breakdown voltage 2SJ352 –200 — —
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source cutoff voltage V
Drain to source saturation
V
GS(off)
DS(sat)
voltage
Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = –3 A, VDS = –10 V*
Input capacitance Ciss — 800 — pF VGS = 5 V, VDS = –10 V,
Output capacitance Coss — 1000 — pF f = 1 MHz
Reverse transfer capacitance Crss — 18 — pF
Turn-on time t
Turn-off time t
on
off
Note: 1. Pulse test
–180 — — V ID = –10 mA, VGS = 10 V
±20——V I
= ±100 µA, VDS = 0
G
–0.15 — –1.45 V ID = –100 mA, VDS = –10 V
— — –12 V ID = –8 A, VGD = 0*
1
— 320 — ns VDD = –30 V, ID = –4 A
— 120 — ns
1
3
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