HIT 2SJ350 Datasheet
2SJ350
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
ADE-208-138
1st. Edition
Outline
TO-220FM
G
D
S
1
2
3
1. Gate
2. Drain
3. Source
2SJ350
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R
GSS
DSS
GS(off)
DS(on)
resistance — 0.7 0.9 Ω ID = –4 A, VGS = –4 V*
Forward transfer admittance |yfs| 3.0 5.0 — S ID = –4 A, VDS = –10 V*
Input capacitance Ciss — 900 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 265 — pF f = 1 MHz
Reverse transfer capacitance Crss — 65 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
–120 — — V ID = –10 mA, VGS = 0
±20——V I
——±10 µAVGS = ±16 V, VDS = 0
— — –250 µAVDS = –100 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.5 0.7 Ω ID = –4 A, VGS = –10 V*
— 11 — ns ID = –4 A, VGS = –10 V,
— 45 — ns RL = 7.5 Ω
— 170 — ns
—80—ns
— –1.2 — V IF = –6 A, VGS = 0
— 240 — ns IF = –6 A, VGS = 0,
–120 V
±20 V
–6 A
–12 A
–6 A
20 W
= ±100 µA, VDS = 0
G
di
/dt = 50 A/µs
F
1
1
1
2
2SJ350
Power vs. Temperature Derating
40
30
20
10
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
–10
–10 V
–6 V
–8
D
–4 V
–6
–3.5 V
–20
Maximum Safe Operation Area
–10
PW = 10 ms (1shot)
–5
D
DC Operation (Tc = 25 °C)
–2
Operation in
this area is
–1
limited by R
–0.5
Drain Current I (A)
DS(on)
–0.2
Ta = 25 °C
–0.1
–2 –5 –10 –20 –50
Drain to Source Voltage V (V)
Typical Transfer Characteristics
–10
Tc = –25 °C
–8
D
–6
25 °C
10 µs
100 µs
1 ms
DS
–100
75 °C
–200
–4
Drain Current I (A)
–2
0
–4 –8 –12 –16 –20
Drain to Source Voltage V (V)
–3 V
V = –2.5 V
GS
Pulse Test
DS
–4
Drain Current I (A)
–2
V = –10 V
DS
Pulse Test
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
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