HIT 2SJ319-S, 2SJ319-L Datasheet
2SJ319(L), 2SJ319(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter
Outline
1
2
3
1
2
3
4
4
DPAK-1
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SJ319(L), 2SJ319(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
–200 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
–3 A
Drain peak current I
D(pulse)
*
1
–12 A
Body to drain diode reverse drain current I
DR
–3 A
Channel dissipation Pch*
2
20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
C
= 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–200 — — V ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20——V I
G
= ±100 µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
— — –100 µAV
DS
= –160 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
–2.0 — –4.0 V ID = –1 mA, VDS = –10 V
Static drain to source on state
resistance
R
DS(on)
— 1.7 2.3 Ω ID = –2 A, VGS = –10 V*
1
Forward transfer admittance |yfs| 1.0 1.7 — S ID = –2 A, VDS = –10 V*
1
Input capacitance Ciss — 330 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 130 — pF f = 1 MHz
Reverse transfer capacitance Crss — 25 — pF
Turn-on delay time t
d(on)
— 10 — ns ID = –2 A, VGS = –10 V,
Rise time t
r
— 30 — ns RL = 15 Ω
Turn-off delay time t
d(off)
—40—ns
Fall time t
f
—30—ns
Body to drain diode forward
voltage
V
DF
— –1.15 — V IF = –3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
— 180 — ns IF = –3 A, VGS = 0,
di
F
/dt = 50 A/µs
Note: 1. Pulse test
2SJ319(L), 2SJ319(S)
3
20
15
10
5
0
Channel Dissipation Pch (W)
50 100 150 200
Case Temperature Tc (°C)
Power vs. Temperature Derating
–50
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
–30
–10
–3
–1
–0.3
–0.1
–0.05
–1 –3 –10 –30 –100 –300–500
100 µs
PW = 10 ms (1shot)
Operation in
this area is
limited by R
DS(on)
10 µs
Ta = 25 °C
1 ms
DC Operation (Tc = 25 °C)
–5
–4
–3
–2
–1
0 –4 –8 –12 –16 –20
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Pulse Test
Typical Output Characteristics
–10 V
–8 V
–6 V
–5 V
–4 V
V = –3.5 V
GS
–5
–4
–3
–2
–1
0 –2–4–6–8–10
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
V = –10 V
Pulse Test
DS
75 °C
Typical Transfer Characteristics
Tc = –25 °C
25 °C
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