HIT 2SJ247 Datasheet

2SJ247
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
Suitable for switching regulator, DC-DC converter
Outline
TO-220AB
G
1
D
S
2
3
1. Gate
2. Drain (Flange)
3. Source
2SJ247
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body to drain diode reverse drain current I Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at T
= 25°C
C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage Gate to source breakdown
V
(BR)GSS
voltage Gate to source leak current I Zero gate voltage drain current I Gate to source cutoff voltage V Static drain to source on state R
GSS
DSS
GS(off)
DS(on)
resistance 0.3 0.45 ID = –4 A, VGS = –4 V* Forward transfer admittance |yfs| 3.0 5.5 S ID = –4 A, VDS = –10 V* Input capacitance Ciss 880 pF VDS = –10 V, VGS = 0, Output capacitance Coss 325 pF f = 1 MHz Reverse transfer capacitance Crss 80 pF Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage Body to drain diode reverse
t
rr
recovery time
–100 V ID = –10 mA, VGS = 0
±20——V I
——±10 µAVGS = ±16 V, VDS = 0 — –250 µAVDS = –80 V, VGS = 0 –1.0 –2.0 V ID = –1 mA, VDS = –10 V — 0.25 0.3 ID = –4 A, VGS = –10 V*
12 ns ID = –4 A, VGS = –10 V, — 47 ns RL = 7.5 150 ns —75—ns — –1.0 V IF = –8 A, VGS = 0
170 ns IF = –8 A, VGS = 0,
–100 V ±20 V –8 A –32 A –8 A 40 W
= ±100 µA, VDS = 0
G
di
/dt = 50 A/µs
F
1
1
1
2
2SJ247
Power vs. Temperature Derating
60
40
20
Channel Dissipation Pch (W)
0 10050 150
Case Temperature Tc (°C)
Typical Output Characteristics
–20
D
–16
–12
–10 V
–6 V
Pulse Test
–4.5 V
–4 V
–50
Maximum Safe Operation Area
–30
PW = 10 ms (1 Shot)
DC Operation
(Tc = 25°C)
D
–10
–3
–1
Operation in
–0.3
–0.1
this area is limited by R (on)
DS
Drain Current I (A)
–0.05
–3 –10 –300 –1000
–1 –30 –100
Drain to Source Voltage V (V)
Typical Transfer Characteristics
–10
Pulse Test
–8
V = –10 V
DS
D
–6
10 s
100 s
1 ms
–25°C
µ
µ
Ta = 25°C
DS
Tc = 75°C
25°C
–8
Drain Current I (A)
–4
–3.5 V
–3 V
–2.5 V
0 –4 –8 –12 –16 –20
Drain to Source Voltage V (V)
DS
–4
Drain Current I (A)
–2
0 –2 –4 –6 –8 –10
Gate to Source Voltage V (V)
GS
3
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