HIT 2SJ244 Datasheet

2SJ244

Silicon P-Channel MOS FET

Application

High speed power switching

Low voltage operation

Features

• Very Low on-resistance

• High speed switching

• Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.

Outline

UPAK

G

1

2

3

4

D

1. Gate

2. Drain

3. Source

4. Drain

S

2SJ244

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%

2. Value on the alumina ceramic board (12.5×20×0.7 mm)

3. Marking is “JY”.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source cutoff current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

GSS

DSS

R

GS(off)

DS(on)1

resistance
Static drain to source on state

R

DS(on)2

resistance
Forward transfer admittance |yfs| — 1.8 — S ID = –1 A*1, VDS = –5 V
Input capacitance Ciss — 130 — pF VDS = –5 V, VGS = 0,
Output capacitance Coss — 50 — pF f = 1 MHz
Reverse transfer capacitance Crss — 260 — pF
Turn-on delay time t
Turn-off delay time t
Body to drain diode forward

(on)

(off)

V

DF

voltage
Note: 1. Pulse test

–12 — — V ID = –1 mA, VGS = 0

±7——V I

——±5µAVGS = ±6 V, VDS = 0
——–1µAVDS = –8 V, VGS = 0
–0.4 — –1.4 V ID = –100 µA, VDS = –5 V
— 0.65 0.9 Ω ID = –0.5 A*1, VGS = –2.5 V

— 0.5 — Ω ID = –1 A*1, VGS = –4 V

— 365 — ns ID = –0.2 A*1, Vin = –4 V,
— 1450 — ns RL = 51 Ω
——7VI

–12 V

±7V
±2A
±4A

1W

= ±10 µA, VDS = 0

G

= 4 A*1, VGS = 0

F

2

Maximum Channel Power Dissipation Curve

2.0

1.5

-10

-3

-1.0

D

-0.3

Maximum Safe Operation Area

Operation in this Area
is limited by R

DS(on)

DC Operation (Ta=25°C)

PW = 1 ms 1 shot

2SJ244

1.0

0.5

(on the alumina ceramic board)

Channel Power Dissipation Pch ( W )

0

50 100

Ambient Temperature Ta ( °C )

Typical Output Characteristics

-5

-5

- 4.5

-4

D

-3

-2

Drain Current I ( A )

-1

-4

Pulse Test

V = -1.5 V

GS

150 200

-3.5

-3

-2.5

-2

-0.1

Drain Current I ( A )

-0.03

-0.01

-0.1 -0.3 -1.0 -3 -10 -30 -100

Drain to Source Voltage V (V)

DS

**on the alumina
ceramic board

Typical Forward Transfer Characteristics

-5
V = -5 V

DS

Pulse Test

-4

D

-3

-2

Drain Current I ( A )

-1

Ta = -25 °C

+25

+75

-4

0

-2

Drain to Source Voltage V ( V )

-6

DS

-10

-8

0-1

Gate to Source Voltage V ( V )

-2

-3

-4 -5

GS

3