HIT 2SJ181-S, 2SJ181-L Datasheet
2SJ181(L), 2SJ181(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
1
2
3
1
2
3
4
4
DPAK-1
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SJ181(L), 2SJ181(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
–600 V
Gate to source voltage V
GSS
±15 V
Drain current I
D
–0.5 A
Drain peak current I
D(pulse)
*
1
–1.0 A
Body to drain diode reverse drain current I
DR
–0.5 A
Channel dissipation Pch*
2
20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
C
= 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–600 — — V ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±15——V I
G
= ±100 µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±12 V, VDS = 0
Zero gate voltage drain current I
DSS
— — –100 µAV
DS
= –500 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
–2.0 — –4.0 V ID = –1 mA, VDS = –10 V
Static drain to source on state
resistance
R
DS(on)
—1525Ω I
D
= –0.3 A, VGS = –10 V*
1
Forward transfer admittance |yfs| 0.3 0.45 — S ID = –0.3 A, VDS = –20 V*
1
Input capacitance Ciss — 220 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 55 — pF f = 1 MHz
Reverse transfer capacitance Crss — 13 — pF
Turn-on delay time t
d(on)
—7 —nsI
D
= –0.3 A, VGS = –10 V,
Rise time t
r
— 20 — ns RL = 100 Ω
Turn-off delay time t
d(off)
—35—ns
Fall time t
f
—35—ns
Body to drain diode forward
voltage
V
DF
— –0.85 — V IF = –0.5 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
— 230 — ns IF = –0.5 A, VGS = 0,
di
F
/dt = 50 A/µs
Note: 1. Pulse test
2SJ181(L), 2SJ181(S)
3
40
30
20
10
0
Channel Dissipation Pch (W)
50 100 150 200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
–10 –20
–50 –100 –200 –500 –1000
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
10 µs
DC Operation (Tc = 25 °C)
1 ms
100 µs
PW = 10 ms (1shot)
–1.0
–0.8
–0.6
–0.4
–0.2
0
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
–10 –20 –30 –40 –50
–10 V
–5 V
Pulse Test
V = –4 V
GS
–4.5 V
–6 V
–0.5
–0.4
–0.3
–0.2
–0.1
0
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
–2 –4 –6 –8 –10
Tc = –25 °C
75 °C
25 °C
V = –20 V
Pulse Test
DS
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