HIT 2SJ160, 2SJ162, 2SJ161 Datasheet
2SJ160, 2SJ161, 2SJ162
Silicon P-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
2SJ160, 2SJ161, 2SJ162
Outline
TO-3P
D
G
S
1
2
3
1. Gate
2. Source
(Flange)
3. Drain
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SJ160 V
DSX
2SJ161 –140
2SJ162 –160
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
GSS
D
DR
1
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
–120 V
±15 V
–7 A
–7 A
100 W
2
2SJ160, 2SJ161, 2SJ162
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SJ160 V
(BR)DSX
breakdown voltage 2SJ161 –140 — — V
2SJ162 –160 — — V
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source cutoff voltage V
Drain to source saturation
V
GS(off)
DS(sat)
voltage
Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = –3 A, VDS = –10 V*
Input capacitance Ciss — 900 — pF VGS = 5 V, VDS = –10V,
Output capacitance Coss — 400 — pF f = 1 MHz
Reverse transfer capacitance Crss — 40 — pF
Turn-on time t
Turn-off time t
on
off
Note: 1. Pulse test
–120 — — V ID = –10 mA , VGS = 10 V
±15——V I
= ±100 µA, VDS = 0
G
–0.15 — –1.45 V ID = –100 mA, VDS = –10 V
— — –12 V ID = –7 A, VGD = 0*
1
— 230 — ns VDD = –20 V, ID = –4 A
— 110 — ns
1
3
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