HIT 2SJ130-S, 2SJ130-L Datasheet

2SJ130(L), 2SJ130(S)

Silicon P-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators

Outline

1

2

3

1

2

3

4

4

DPAK-1

1. Gate

2. Drain

3. Source

4. Drain

D

G

S

2SJ130(L), 2SJ130(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

–300 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

–1 A

Drain peak current I

D(pulse)

–2 A

Body to drain diode reverse drain current I

DR

–1 A

Channel dissipation Pch*

1

20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown
voltage

V

(BR)DSS

–300 — — V ID = –10 mA, VGS = 0

Gate to source breakdown
voltage

V

(BR)GSS

±20——V I

G

= ±100 µA, VDS = 0

Gate to source leak current I

GSS

——±10 µAV

GS

= ±16 V, VDS = 0

Zero gate voltage drain current I

DSS

— — –100 µAV

DS

= –240 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

–2.0 — –4.0 V ID = –1 mA, VDS = –10 V

Static drain to source on state
resistance

R

DS(on)

— 6.0 8.5 Ω ID = –0.5 A, VGS = –10 V*

1

Forward transfer admittance |yfs| 0.25 0.4 — S ID = –0.5 A, VDS = –20 V*

1

Input capacitance Ciss — 235 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 65 — pF f = 1 MHz
Reverse transfer capacitance Crss — 16 — pF
Turn-on delay time t

d(on)

— 10 — ns ID = –0.5 A, VGS = –10 V,

Rise time t

r

— 25 — ns RL = 60 Ω

Turn-off delay time t

d(off)

—35—ns

Fall time t

f

—45—ns

Body to drain diode forward
voltage

V

DF

— –0.9 — V IF = –1 A, VGS = 0

Body to drain diode reverse
recovery time

t

rr

— 200 — ns IF = –1 A, VGS = 0,

di

F

/dt = 50 A/µs

Note: 1. Pulse test

2SJ130(L), 2SJ130(S)

3

30

20

10

0 50 100 150

Case Temperature T

C

(°C)

Power vs. Temperature Derating

Channel Dissipation Pch (W)

–5

–1.0

–0.2

–0.05

–20 –100 –500

Drain to Source Voltage V

DS

(V)

Drain Current I

D

(A)

Maximum Safe Operation Area

–2

–0.1

–5 –10 –50 –200

Ta = 25°C

10 µs

Operation in this area
is limited by R

DS (on)

–0.5

PW = 10 ms (1 Shot)

DC Operation (T

C

= 25°C)

100 µs

1 ms

–2.0

–20 –50

Drain to Source Voltage V

DS

(V)

Typical Output Characteristics

–1.6

–0.4

–10 –30 –40

Pulse Test

0

–0.8

–1.2

–5 V

V

GS

= –4 V

–7 V

–15 V

Drain Current I

D

(A)

–6 V

–10 V

–2.0

–4

–10

Gate to Source Voltage V

GS

(V)

Drain Current I

D

(A)

Typical Transfer Characteristics

–1.6

–0.4

–2 –6 –8

–25°C

0

–0.8

–1.2

V

DS

= –20 V

Pulse Test

75°C

TC = 25°C