HIT 2SH31 Datasheet

Features

• High speed switching

• Low on-voltage

Outline

2SH31

Silicon N Channel IGBT

High Speed Power Switching

ADE-208-793(Z)

1st. Edition

May 1999

TO–3P

C

G

E

1

2

3

1. Gate

2. Collector (Flange)

3. Emitter

2SH31

C

G

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to Emitter voltage V
Gate to Emitter voltage V
Collector current I

CES

GES

C

Collector peak current ic(peak) 150 A
Collector dissipation P

C

Note1

Channel temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

Note: 1. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Zero gate voltage collector

I

CES

current
Gate to emitter leak current I
Gate to emitter cutoff voltage V
Collector to emitter saturation

V

GES

GE(off)

CE(sat)

voltage
Input capacitance Cies  4100  pF V

Switching time t

r

t

on

t

f

t

off

100 µAV

±1 µAV

6.0  8.0 V IC = 75mA, VCE = 10V
 2.1 2.6 V IC = 75A, VGE = 15V

 400  ns IC = 75A
 600  ns RL = 4 Ω
 300 600 ns VGS = ±15V
 800 1600 ns Rg = 50 Ω

600 V
±20 V
75 A

150 W

CE

GE

E

f = 1MHz

= 600V, VGE = 0

= ± 20 V, VCE = 0

= 10V, V

E

= 0

2

Main Characteristics

2SH31

Power vs. Temperature Derating

200

150

100

50

Channel Dissipation Pch (W)

0

200
100

50

C

50 100 150 200

Case Temperature Tc (°C)

Reverse Bias SOA

1000

300
100

0.3

0.1

Collector Current I (A)

0.03

0.01

100

Maximum Safe Operation Area

30
10

PW = 10 ms (1shot)

3
1

Ta = 25 °C

0.1 0.3 1 3 10 30 100
Collector to Emitter Voltage V (V)

Typical Output Characteristics

15 V

80

DC Operation (Tc = 25°C)

11 V

100 µs

1 ms

3001000

CE

Pulse Test

10 V

20
10

5

Collector Current I (A)

2

Tc = 25 °C

1

0

200 400 600 800

Collector to Emitter Voltage V (V)

CE

60

40

20

Collector Current I (A)

0

246810

Collector to Emitter Voltage V (V)

V = 8 V

9 V

GE

CE

3