HIT 2SH30 Datasheet

Features

• High speed switching

• Low on-voltage

Outline

2SH30

Silicon N Channel IGBT

High Speed Power Switching

ADE-208-792A(Z)

2nd. Edition

May 1999

TO–3P

C

G

E

1

2

3

1. Gate

2. Collector (Flange)

3. Emitter

2SH30

C

G

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to Emitter voltage V
Gate to Emitter voltage V
Collector current I

CES

GES

C

Collector peak current ic(peak) 100 A
Collector dissipation P

C

Note1

Channel temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Zero gate voltage collector

I

CES

current
Gate to emitter leak current I
Gate to emitter cutoff voltage V
Collector to emitter saturation

V

GES

GE(off)

CE(sat)

voltage
Input capacitance Cies — 2800 — pF V

Switching time t

r

t

on

t

f

t

off

— — 250 µAV

——±1 µAV

6.0 — 8.0 V IC = 50 mA, VCE = 10V
— 2.1 2.6 V IC = 50 A, VGE = 15V

— 280 — ns IC = 50 A
— 430 — ns RL = 6 Ω
— 300 600 ns VGS = ±15V
— 650 1300 ns Rg = 50 Ω

600 V
±20 V
50 A

100 W

CE

GE

E

f = 1MHz

= 600V, VGE = 0

= ± 20 V, VCE = 0

= 10V, V

E

= 0

2

Main Characteristics

2SH30

Power vs. Temperature Derating

160

120

80

40

Channel Dissipation Pch (W)

0

0

50 100 150 200

Case Temperature Tc (°C)

Reverse Bias SOA

100

50

20

C

10

5

Maximum Safe Operation Area

100

30
10

C

3
1

DC Operation (Tc = 25

0.3

0.1

Collector Current I (A)

0.03
Ta = 25 °C

0.01

1 3 10 30 100

Collector to Emitter Voltage V (V)

Typical Output Characteristics

50

15 V

40

C

12 V

11 V

30

100 µs

1 ms

PW = 10 ms (1shot)

°C)

300 1000

CE

Pulse Test

10 V

2
1

0.5

Collector Current I (A)

0.2
Tc = 25 °C

0.1

0

200 400 600 800

Collector to Emitter Voltage V (V)

CE

20

9 V

10

Collector Current I (A)

V = 8 V

GE

0 246810

Collector to Emitter Voltage V (V)

CE

3