Features
• High speed switching
• Low on-voltage
Outline
2SH27
Silicon N Channel IGBT
High Speed Power Switching
ADE-208-789A(Z)
2nd. Edition
May 1999
TO–220AB
C
G
1
E
2
3
1. Gate
2. Collector (Flange)
3. Emitter
2SH27
C
G
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to Emitter voltage V
Gate to Emitter voltage V
Collector current I
CES
GES
C
Collector peak current ic(peak) 30 A
Collector dissipation P
C
Note1
Channel temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector
I
CES
current
Gate to emitter leak current I
Gate to emitter cutoff voltage V
Collector to emitter saturation
V
GES
GE(off)
CE(sat)
voltage
Input capacitance Cies — 920 — pF V
Switching time t
r
t
on
t
f
t
off
— — 100 µAV
——±1 µAV
6.0 — 8.0 V IC = 15mA, VCE = 10V
— 2.1 2.6 V IC = 15A, VGE = 15V
— 150 — ns IC = 15A
— 220 — ns RL = 20 Ω
— 300 600 ns VGS = ±15V
— 410 820 ns Rg = 50 Ω
600 V
±20 V
15 A
50 W
CE
GE
E
f = 1MHz
= 600V, VGE = 0
= ± 20 V, VCE = 0
= 10V, V
E
= 0
2
Main Characteristics
2SH27
Power vs. Temperature Derating
80
60
40
20
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Reverse Bias SOA
50
20
10
C
5
2
1
Maximum Safe Operation Area
100
30
10
C
3
PW = 10 ms (1shot)
1
DC Operation (Tc = 25°C)
0.3
0.1
Collector Current I (A)
0.03
Ta = 25 °C
0.01
1 3 10 30 100
Collector to Emitter Voltage V (V)
Typical Output Characteristics
20
15 V
12 V
16
C
12
8
100 µs
1 ms
300 1000
CE
Pulse Test
11 V
10 V
0.5
Collector Current I (A)
0.2
Tc = 25 °C
0.1
0
200 400 600 800
Collector to Emitter Voltage V (V)
CE
4
Collector Current I (A)
V = 9 V
GS
0 246810
Collector to Emitter Voltage V (V)
CE
3
2SH27
C
Typical Transfer Characteristics
20
V = 10 V
CE
Pulse Test
16
12
Tc = 75°C
8
–25°C
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
5
Pulse Test
4
CE(sat)
V (V)
3
I = 10 A
2
C
5 A
4
Collector Current I (A)
0
4 8 12 16 20
25°C
Gate to Emitter Voltage V (V)
Collecot to Emitter Saturation Voltage
10
vs. Collector Current
5
CE(sat)
2
V (V)
–25°C
1
25°C
0.5
0.2
V = 15 V
GE
0.1
Pulse Test
Collector to Emitter Saturation Voltage
0.1
Collector Current I (A)
Tc = 75°C
1
3
10 1000.3
C
GE
30
1
Collector to Emitter Saturation Voltage
0
48
12
Gate to Emitter Voltage V (V)
Typical Capacitance vs.
Collecotor to Emitter Voltage
10000
3000
1000
300
100
30
Capacitance C (pF)
10
3
1
01020304050
Collector to Emitter Voltage V (V)
2.5 A
16 20
GE
V = 0
GE
f = 1 MHz
Cies
Coes
Cres
CE
4
2SH27
Dynamic Input Characteristics
500
V = 200 V
CE
400
CC
300 V
400 V
V
GE
300
I = 15 A
C
200
100
V = 400 V
CC
V
CE
300 V
200 V
Collector to Emitter Voltage V (V)
0
20 40 60 80 100
Gate Charge Qg (nc)
Switching Characteristics
1000
Switching Characteristics
GE
1000
500
t
f
20
16
200
12
100
8
50
4
0
Switching Time t (ns)
20
Gate to Emitter Voltage V (V)
10
V = 300V, V = ±15 V
CC
Rg = 50 , Ta = 25°C
1 2 10 20
Collector Current I (A)
Switching Characteristics
1000
t
d(off)
t
r
t
d(on)
GE
Ω
5
C
t
t
d(off)
t
d(on)
f
t
r
300
100
30
10
Switching Time t (ns)
3
1
I = 15A, R = 20
C
V = ±15 V
GE
L
1 3 10 30 100 300 1000
Gate Resistance Rg ( )
500
200
t
f
t
r
100
50
t
d(off)
t
d(on)
Switching Time t (ns)
Ω
20
I = 15A, R = 20
C
V = ±15 V, Rg = 50
GE
Ω
L
Ω
10
25 50 75 100 125
Ω
Case Temperature Tc (°C)
5
2SH27
Normalized Transient Thermal Impedance vs. Pulse Width
3
s (t)
1
γ
D = 1
0.5
0.3
0.2
θ γ θ
0.1
0.1
ch – c(t) = s (t) • ch – c
θ
ch – c = 2.5 °C/W, Tc = 25 °C
0.05
P
0.03
Normalized Transient Thermal Impedance
0.02
0.01
DM
1shot pulse
0.01
10 µ
100 µ 1 m 10 m
100 m 1 10
Pulse Width PW (S)
Switching Time Test Circuit Waveform
10%
0
Vin
Ic Monitor
V
CE
90%
PW
T
Tc = 25°C
PW
D =
T
90%
Vin Monitor
Rg
V
CE
Monitor
D.U.T.
R
L
V
CC
td(on)
ton
10%
tr
90%
Vin ± 15 V
Ic
td(off)
10%
tf
toff
6
Package Dimensions
2SH27
Unit: mm
2.79 ±0.2
1.27
18.5 ±0.57.8 ±0.5
1.2±0.1
2.54 ±0.5
10.16±0.2
9.5
8.0
1.27±0.1
1.5 max
0.76 ±0.1
2.54 ±0.5
f 3.6
+ 0.2
– 0.1
6.4
+ 0.1
– 0.08
15.0 ±0.3
14.0 ±0.5
0.5±0.1
2.7 max
4.44±0.2
1.26±0.15
Hitachi Code
EIAJ
JEDEC
TO–220AB
SC–46
—
7
2SH27
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
8
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Loading...