HIT 2SH26 Datasheet
Features
• High speed switching
• Low on-voltage
Outline
2SH26
Silicon N Channel IGBT
High Speed Power Switching
ADE-208-788A(Z)
2nd. Edition
May 1999
TO–220AB
C
G
1
E
2
3
1. Gate
2. Collector (Flange)
3. Emitter
2SH26
C
G
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to Emitter voltage V
Gate to Emitter voltage V
Collector current I
CES
GES
C
Collector peak current ic(peak) 20 A
Collector dissipation P
C
Note1
Channel temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector
I
CES
current
Gate to emitter leak current I
Gate to emitter cutoff voltage V
Collector to emitter saturation
V
GES
GE(off)
CE(sat)
voltage
Input capacitance Cies — 620 — pF V
Switching time t
r
t
on
t
f
t
off
— — 100 µAV
——±1 µAV
6.0 — 8.0 V IC = 10mA, VCE = 10V
— 2.1 2.6 V IC = 10A, VGE = 15V
— 140 — ns IC = 10A
— 215 — ns RL = 30 Ω
— 300 600 ns VGS = ±15V
— 380 760 ns Rg = 50 Ω
600 V
±20 V
10 A
50 W
CE
GE
E
f = 1MHz
= 600V, VGE = 0
= ± 20 V, VCE = 0
= 10V, V
E
= 0
2
Main Characteristics
2SH26
Power vs. Temperature Derating
80
60
40
20
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Reverse Bias SOA
50
20
10
C
5
2
1
Maximum Safe Operation Area
100
30
10
C
3
1
DC Operation (Tc = 25°C)
PW = 10 ms (1shot)
0.3
0.1
Collector Current I (A)
0.03
Ta = 25 °C
0.01
1 3 10 30 100
Collector to Emitter Voltage V (V)
Typical Output Characteristics
20
15 V
14 V
16
C
12
8
100 µs
1 ms
300 1000
CE
Pulse Test
13 V
12 V
0.5
Collector Current I (A)
0.2
Tc = 25 °C
0.1
0
200 400 600 800
Collector to Emitter Voltage V (V)
CE
4
Collector Current I (A)
11 V
V = 10 V
GS
0 246810
Collector to Emitter Voltage V (V)
CE
3
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