HIT 2SD975 Datasheet
2SD975
Silicon NPN Epitaxial
Application
Power switching / TV horizontal deflection output
Outline
TO-126 MOD
1. Emitter
2. Collector
1
2
3
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector surge current I
Collector power dissipation P
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
CBO
CEO
EBO
C
C(peak)
C(surge)
C
150 V
60 V
5V
2A
2.5 A
5A
1.0 W
2SD975
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Fall time t
Note: 1. Pulse test.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
FE
V
CE(sat)
V
BE(sat)
f
150 — — V IC = 1 mA, IE = 0
60 — — V IC = 10 mA, RBE = ∞
5 ——V I
= 1 mA, IC = 0
E
— — 1.0 µAVCB = 100 V, IE = 0
150 — — VCE = 5 V, IC = 1.5 A*
— — 0.5 V IC = 1.5 A, IB = 0.05 A*
— — 1.3 V
— — 0.6 µsI
= 1.5 A, IB1 = –IB2 = 50 mA
C
1
1
Maximum Collector Dissipation
1.2
(W)
C
0.8
0.4
Collector power dissipation P
0 50 100 150
Ambient temperature Ta (°C)
Curve
Area of Safe Operation
6
(20 V, 5 A)
5
(A)
C
4
For picture
tube arcing
3
2
Collector current I
1
0 50 100 150
Collector to emitter voltage VCE (V)
TC = 25°C
f = 15.75 kHz
(60 V, 0.5 A)
1 mA
2
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