HIT 2SD974 Datasheet

Application

• Power switching

• TV horizontal deflection output

Outline

TO-92MOD

2SD974

Silicon NPN Epitaxial

1. Emitter

2. Collector

3. Base

3

2

1

2SD974

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Surge collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C(peak)

C(surge)

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown
voltage

Collector to emitter breakdown
voltage

Emitter to base breakdown
voltage

Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation

voltage
Base to emitter saturation

voltage
Fall time t

Note: 1. Pulse test

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

FE

V

CE(sat)

V

BE(sat)

f

120 — — V IC = 10 µA, IE = 0

60 — — V IC = 1 mA, RBE = ∞

5——VI

— — 1.0 µAV
150 — — V
— — 0.3 V IC = 1 A, IB = 0.05 A*

— — 1.2 MHz

— 0.4 — pF ICP = 1 A, IB1 = –IB2 = 50 mA*

120 V
60 V
5V
1A

1.5 A
4A

0.9 W

= 10 µA, IC = 0

E

= 100 V, IE = 0

CB

= 5 V, IC = 1 A*

CE

1

1

1

2