HIT 2SD970K Datasheet
2SD970(K)
Silicon NPN Triple Diffused
Application
Medium speed and power switching complementary pair with 2SB791(K)
Outline
TO-220AB
2 kΩ
(Typ)
200 Ω
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
120 V
Collector to emitter voltage V
CEO
120 V
Emitter to base voltage V
EBO
7V
Collector current I
C
8A
Collector peak current I
C(peak)
12 A
Collector power dissipation PC*
1
40 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SD970(K)
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120 — — V IC = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7——VI
E
= 50 mA, IC = 0
Collector cutoff current I
CBO
— — 100 µAV
CB
= 120 V, IE = 0
I
CEO
——10µAV
CE
= 100 V, RBE = ∞
DC current transfer ratio h
FE
1000 — 20000 VCE = 3 V, IC = 4 A*
1
Collector to emitter saturation V
CE(sat)1
— — 1.5 V IC = 4 A, IB = 8 mA*
1
voltage V
CE(sat)2
— — 3.0 V IC = 8 A, IB = 80 mA*
1
Base to emitter saturation V
BE(sat)1
— — 2.0 V IC = 4 A, IB = 8 mA*
1
voltage V
BE(sat)2
— — 3.5 V IC = 8 A, IB = 80 mA*
1
Turn on time t
on
— 0.4 — µsI
C
= 4 A, IB1 = –IB2 = 8 mA
Storage time t
stg
— 5.4 — µs
Fall time t
f
— 1.1 — µs
Note: 1. Pulse test.
0 50 100 150
Case temperature T
C
(°C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
20
40
60
0.03
0.1
0.3
1.0
3
10
30
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
1 3 10 30 100 300 1,000
Area of Safe Operation
1 µs
100 µs
1 ms
PW = 10 ms
DC Operation (T
C
= 25°C)
iC
(peak)
IC
max
(Continuous)
Ta = 25°C
1 shot pulse
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