HIT 2SD789 Datasheet
Application
• Low frequency power amplifier
• Complementary pair with 2SB740
Outline
TO-92MOD
2SD789
Silicon NPN Epitaxial
1. Emitter
2. Collector
3. Base
3
2
1
2SD789
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 20 — pF V
Note: 1. The 2SD789 is grouped by hFE as follows.
BCDE
100 to 200 160 to 320 250 to 500 400 to 800
100 — — V IC = 10 µA, IE = 0
50 — — V IC = 1 mA, RBE = ∞
6——VI
——1 µAV
— — 0.2 µAVEB = 6 V, IC = 0
1
100 — 800 V
— — 0.3 V IC = 1 A, IB = 0.1 A
— 100 — MHz V
100 V
50 V
6V
1A
0.9 W
= 10 µA, IC = 0
E
= 80 V, IE = 0
CB
= 2 V, IC = 0.1A
CE
= 2 V, IC = 10 mA
CE
= 10 V, IE = 0, f = 1MHz
CB
2
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