HIT 2SD788, 2SD787 Datasheet
2SD787, 2SD788
Silicon NPN Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SB738 and 2SB739
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SD787, 2SD788
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SD787 2SD788 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –50 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SD787 2SD788
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Note: 1. The 2SD787 and 2SD788 are grouped by hFE as follows.
BCDE
100 to 200 160 to 320 250 to 500 400 to 800
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
T
20 — — 20 — — V IC = 10 µA, IE = 0
16 — — 20 — — V IC = 1 mA, RBE = ∞
6——6 ——VIE = 10 µA, IC = 0
——2 — —2 µAVCB = 16 V, IE = 0
— — 0.2 — — 0.2 µAVEB = 6 V, IC = 0
1
100 — 800 100 — 800 VCE = 2 V, IC = 0.1 A
— — 0.3 — — 0.3 V IC = 1 A, IB = 0.1 A
— 100 — — 100 — MHz VCE = 2 V,
Cob — 20 — — 20 — pF VCB = 10 V, IE = 0,
20 20 V
16 20 V
66V
22A
0.9 0.9 W
I
= 10 mA
C
f = 1 MHz
2
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