HIT 2SD768K Datasheet
2SD768(K)
Silicon NPN Epitaxial
Application
Medium speed and power switching complementary pair with 2SB727(K)
Outline
TO-220AB
3 kΩ
(Typ)
200 Ω
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
120 V
Collector to emitter voltage V
CEO
120 V
Emitter to base voltage V
EBO
7V
Collector current I
C
6A
Collector peak current I
C(peak)
10 A
Collector power dissipation PC*
1
40 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SD768(K)
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120 — — V IC = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7——VI
E
= 50 mA, IC = 0
Collector cutoff current I
CBO
— — 100 µAV
CB
= 120 V, IE = 0
I
CEO
——10µAV
CE
= 100 V, RBE=∞
DC current transfer ratio h
FE
1000 — 20000 VCE = 3 V, IC = 3 A*
1
Collector to emitter saturation V
CE(sat)1
— — 1.5 V IC = 3 A, IB = 6 mA*
1
voltage V
CE(sat)2
——3VI
C
= 6A, IB = 60 mA*
1
Base to emitter saturation V
BE(sat)1
——2VI
C
= 3 A, IB = 6 mA*
1
voltage V
BE(sat)2
— — 3.5 V IC = 6 A, IB = 60 mA*
1
Turn on time t
on
— 1.0 — µsI
C
= 3 A, IB1 = –IB2 = 6 mA
Turn off time t
off
— 3.0 — µsI
C
= 3 A, IB1 = –IB2 = 6 mA
Note: 1. Pulse test.
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature T
C
(°C)
Collector power dissipation P
C
(W)
30
10
3
1.0
0.3
0.1
Collector current I
C
(A)
0.03
1 3 30 30010 100 1,000
Collector to emitter voltage V
CE
(V)
i
C(peak)
I
C(max)
DC Operation(T
C
= 25°C)
PW = 10 ms
1 ms
100 µs
Area of Safe Operation
Ta = 25°C
1 shot pulse
1 µs
Loading...