HIT 2SD756A, 2SD756 Datasheet
2SD755, 2SD756, 2SD756A
Silicon NPN Epitaxial
Application
• Low frequency high voltage amplifier
• Complementary pair with 2SB715, 2SB716 and 2SB716A
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SD755, 2SD756, 2SD756A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SD755 2SD756 2SD756A Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SD755 2SD756 2SD756A
Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to emitter
breakdown voltage
Collector to base
breakdown voltage
Collector cutoff current I
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Note: 1. The 2SD755, 2SD756 and 2SD756A are grouped by h
DEF
2SD755 250 to 500 400 to 800 600 to 1200
2SD756 250 to 500 400 to 800 —
2SD756A 250 to 500 — —
V
V
CBO
h
V
T
100 — — 120 — — 140 — — V IC = 1 mA,
(BR)CEO
100 — — 120 — — 140 — — V IC = 10 µA, IE = 0
(BR)CBO
— — 0.5 — — 0.5 — — 0.5 µAVCB = 100 V, IE = 0
*1250 — 1200 250 — 800 250 — 500 VCE = 12 V,
FE1
125 — — 125 — — 125 — — VCE = 12 V,
FE2
— — 0.75 — 0.75 — — 0.75 V VCE = 12 V,
BE
— — 0.2 — — 0.2 — — 0.2 V IC = 10 mA,
CE(sat)
— 350 — — 350 — — 350 — MHz VCE = 12 V,
Cob — 1.6 — — 1.6 — — 1.6 — pF VCB = 25 V, IE = 0,
100 120 140 V
100 120 140 V
555V
50 50 50 mA
750 750 750 mW
RBE = ∞
IC = 2 mA
IC = 10 mA
IC = 2 mA
IB = 1 mA
IC = 5 mA
f = 1 MHz
as follows.
FE1
2
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