HIT 2SD667A, 2SD667 Datasheet
2SD667, 2SD667A
Silicon NPN Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SB647/A
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SD667, 2SD667A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SD667 2SD667A Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –50 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SD667 2SD667A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Notes: 1. The 2SD667 and 2SD667A are grouped by h
2. Pulse test
BCD
2SD667 60 to 120 100 to 200 160 to 320
2SD667A 60 to 120 100 to 200
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
FE1
h
FE2
V
CE(sat)
BE
T
120 — — 120 — — V IC = 10 µA, IE = 0
80 — — 100 — — V IC = 1 mA, RBE = ∞
5——5 ——VIE = 10 µA, IC = 0
— — 10 — — 10 µAVCB = 100 V, IE = 0
1
*
60 — 320 60 — 200 VCE = 5 V,
30 — — 30 — — VCE = 5 V,
——1——1VIC = 500 mA,
— — 1.5 — — 1.5 V VCE = 5 V,
— 140 — — 140 — MHz VCE = 5 V,
Cob — 12 — — 12 — pF VCB = 10 V, IE = 0,
120 120 V
80 100 V
55V
11A
22A
0.9 0.9 W
I
= 150 mA*
C
I
= 500 mA*
C
I
= 50 mA*
B
I
= 150 mA*
C
I
= 150 mA*
C
2
2
2
2
2
f = 1 MHz
as follows.
FE1
2
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