HIT 2SD476A-K, 2SD476-K Datasheet
2SD476(K), 2SD476A(K)
Silicon NPN Triple Diffused
Application
Power switching complementary pair with 2SB566(K) and 2SB566A(K)
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD476(K) 2SD476A(K) Unit
Collector to base voltage V
CBO
70 70 V
Collector to emitter voltage V
CEO
50 60 V
Emitter to base voltage V
EBO
55V
Collector current I
C
44A
Collector peak current I
C(peak)
88A
Collector power dissipation PC*
1
40 40 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C
2SD476(K), 2SD476A(K)
2
Electrical Characteristics (Ta = 25°C)
2SD476(K) 2SD476A(K)
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
70 — — 70 — — V IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
50 — — 60 — — V IC = 50 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5——5——VI
E
= 10 µA, IC = 0
Collector cutoff current I
CBO
——1 ——1 µAVCB = 50 V, IE = 0
DC current transfer ratio h
FE1
60 — 200 60 — 200 VCE = 4 V, IC = 1 A
(Pulse test)
h
FE2
35 — — 35 — — VCE = 4 V, IC = 0.1 A
Collector to emitter
saturation voltage
V
CE(sat)
— — 1.0 — — 1.0 V IC = 2 A, IB = 0.2 A
Base to emitter
saturation voltage
V
BE(sat)
— — 1.2 — — 1.2 V
Gain bandwidth product f
T
— 7 — — 7 — MHz VCE = 4 V, IC = 0.5 A
Turn on time t
on
— 0.3 — — 0.3 — µsVCC = 10.5 V
Turn off time t
off
— 3.0 — — 3.0 — µsIC = 10 IB1 = –10 IB2 =
Storage time t
stg
— 2.5 — — 2.5 — µs 0.5 A
Note: 1. The 2SD476(K) and 2SD476A(K) are grouped by h
FE1
as follows.
BC
60 to 120 100 to 200
0 50 100 150
Case temperature T
C
(°C)
Collector power dissipation Pc (W)
20
60
40
Maximum Collector Dissipation Curve
0.1
0.2
0.5
1.0
2
5
10
(10 V, 4 A)
(20 V, 2 A)
(50 V, 0.22 A)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
1 2 5 10 20 50 100
Area of Safe Operation
DC
Operation
IC
max
TC = 25°C
P
C
= 40 W
2SD476K
2SD476A
(60 V, 0.15 A)
K
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