HIT 2SD467 Datasheet
Application
• Low frequency power amplifier
• Complementary pair with 2SB561
Outline
TO-92 (1)
2SD467
Silicon NPN Epitaxial
1. Emitter
2. Collector
3. Base
3
2
1
2SD467
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
CBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Base to emitter voltage V
Gain bandwidth product f
BE
T
Collector output capacitance Cob — 12 — pF VCB = 10 V, IE = 0, f = 1 MHz
Note: 1. The 2SD467 is grouped by hFE as follows.
BC
85 to170 120 to 240
25 — — V IC = 10 µA, IE = 0
20 — — V IC = 1 mA, RBE = ∞
5——VI
— — 1.0 µAV
1
85 — 240 V
— 0.19 0.5 V IC = 0.5 A, IB = 0.05 A
— 0.76 1.0 V V
— 280 — MHz V
25 V
20 V
5V
0.7 A
1.0 A
0.5 W
= 10 µA, IC = 0
E
= 20 V, IE = 0
CB
= 1 V, IC = 0.15 A
CE
(Pulse test)
(Pulse test)
= 1 V, IC = 0.15 A
CE
(Pulse test)
= 1 V, IC = 0.15 A
CE
(Pulse test)
2
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