HIT 2SD2492, 2SD2491 Datasheet
2SD2491, 2SD2492
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Features
• Isolated package
TO-126FM
Outline
TO-126FM
1. Emitter
2. Collector
1
2
3
3. Base
2SD2491, 2SD2492
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD2491 2SD2492 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
Collector power dissipation PC*
CBO
CEO
EBO
C
C
1
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
2SD2491 2SD2492
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
DC current transfer ratio h
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Note: 1. The 2SD2491 and 2SD2492 are grouped by h
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
160 — — 200 — — V IC = 10 µA, IE = 0
160 — — 200 — — V IC = 1 mA, RBE = ∞
5——5——VIE = 10 µA, IC = 0
——10———µAVCB = 140 V, IE = 0
—————10µAVCB = 160 V, IE = 0
1
*
60 — 320 60 — 320 VCE = 5 V, IC = 10 mA
30 — — 30 — — VCE = 5 V, IC = 1 mA
— — 1.5 — — 1.5 V VCE = 5 V, IC = 10 mA
——2 ——2 V IC = 30 mA, IB = 3 mA
— 140 — — 140 — MHz VCE = 5 V, IC = 10 mA
V
FE1
FE2
BE
CE(sat)
T
Cob — 3.8 — — 3.8 — pF VCB = 10 V, IE = 0
160 200 V
160 200 V
55V
100 100 mA
1.35 1.35 W
88W
f = 1 MHz
and its specification is as follows.
FE1
BCD
60 to 120 100 to 200 160 to 320
2
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