HIT 2SD2423 Datasheet
2SD2423
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Features
The transistor with a built-in zener diode of surge absorb.
Outline
UPAK
0.5 Ω
(Typ)
2, 4
3
I
D
1
2
3
1
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2 kΩ
(Typ)
2SD2423
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation PC*
CBO
CEO
EBO
C
1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Collector to emitter diode forward current I
D
Note: 1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm).
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Collector to emitter sustaining
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Base to emitter saturation
voltage
Emitter to collector diode
forward voltage
Notes: 1. Pulse test
2. Marking is “GT”.
V
(BR)CBO
V
(BR)CEO
V
CEO(sus)
V
(BR)EBO
CEO
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
D
50 — 70 V IC = 100 µA, IE = 0
50 — — V IC = 10 mA, RBE = ∞
50 — 70 V IC = 1.5 A, RBE = ∞,
7——VI
——10µAV
2000 — 10000 V
— — 1.5 V IC = 1 A, IB = 1 mA*
— — 2.3 V IC = 1.5 A, IB = 1.5 mA*
— — 2.0 V IC = 1 A, IB = 1 mA*
— — 2.5 V IC = 1.5 A, IB = 1.5 mA*
— — 3.5 V ID = 1.5 A*
50 V
50 V
7V
1.5 A
1W
1.5 A
L = 10 mH*
= 50 mA, IC = 0
E
= 40 V, RBE = ∞
CE
= 3 V, IC = 1 A*
CE
1
1
1
1
1
1
1
2
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