HIT 2SD2337 Datasheet
2SD2337
Silicon NPN Triple Diffused
Application
Low frequency high voltage power amplifier TV vertical deflection output complementary pair with
2SB1530
Outline
TO-220FM
1. Base
2. Collector
1
2
3
3. Emitter
2SD2337
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
PC*
1
Junction temperature Tj 150 °C
Storage temperature Tstg –45 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
h
V
CBO
FE1
FE2
CE(sat)
voltage
Base to emitter voltage V
BE
Notes: 1. The 2SD2337 is grouped by h
2. Pulse test.
BCD
60 to 120 100 to 200 160 to 320
150 — — V IC = 50 mA, RBE = ∞
6——VI
——1 µAVCB = 120 V, IE = 0
1
*
60 — 320 VCE = 4 V, IC = 50 mA
60 — — VCE = 10 V, IC = 500 mA*
— — 3.0 V IC = 500 mA, IB = 50 mA*
— — 1.0 V VCE = 4 V, IC = 50 mA
as follows.
FE1
200 V
150 V
6V
2A
5A
1.5 W
20
= 5 mA, IC = 0
E
2
2
2
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