HIT 2SD2247 Datasheet
Application
Low frequency amplifier
Outline
TO-92 (1)
2SD2247
Silicon NPN Epitaxial
1. Emitter
2. Collector
3. Base
3
2
1
2SD2247
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Base to emitter voltage V
Gain bandwidth product f
BE
T
Collector output capacitance Cob — 1.8 3.5 pF VCB = 10 V, IE = 0, f = 1 MHz
Note: 1. The 2SD2247 is grouped by hFE as follows.
Grade B C
h
FE
100 to 200 160 to 320
55 — — V IC = 10 µA, IE = 0
50 — — V IC = 1 mA, RBE = ∞
5——VI
— — 0.5 µAV
— — 0.5 µAV
1
100 — 320 V
— — 0.2 V IC = 10 mA, IB = 1 mA
— 0.67 0.75 V V
— — 100 Mhz VCE = 12 V, IC = 2 mA
55 V
50 V
5V
100 mA
–100 mA
200 mW
= 10 µA, IC = 0
E
= 40 V, IE = 0
CB
= 4 V, IC = 0
EB
= 12 V, IC = 2 mA
CE
= 12 V, IC = 2 mA
CE
2
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