HIT 2SD2121-S, 2SD2121-L Datasheet
2SD2121(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1407(L)/(S)
Outline
4
1
2
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
35 V
Collector to emitter voltage V
CEO
35 V
Emitter to base voltage V
EBO
5V
Collector current I
C
2.5 A
Collector peak current I
C(peak)
3A
Collector power dissipation PC*
1
18 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SD2121(L)/(S)
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
35 — — V IC = 1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
35 — — V IC = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5——VI
E
= 1 mA, IC = 0
Collector cutoff current I
CBO
——20µAV
CB
= 35 V, IE = 0
DC current transfer ratio h
FE1
*
1
60 — 320 VCE = 2 V, IC = 0.5 A*
2
h
FE2
20 — — VCE = 2 V, IC = 1.5 A*
2
Base to emitter voltage V
BE
— — 1.5 V VCE = 2 V, IC = 1.5 A*
2
Collector to emitter saturation
voltage
V
CE(sat)
— — 1.0 V IC = 2 A, IB = 0.2 A*
2
Notes: 1. The 2SD2121(L)/(S) is grouped by h
FE1
as follows.
BCD
60 to 120 100 to 200 160 to 320
2. Pulse test.
Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case temperature T
C
(°C)
Collector power dissipation P
C
(W)
10
1.0
3.0
Collector current I
C
(A)
0.3
0.1
1103 30 100
Collector to emitter voltage V
CE
(V)
Ta = 25°C
1 shot pulse
i
C(peak)
I
C(max)
1 ms
Area of Safe Operation
DC Operation
(T
C
= 25°C)
PW = 10 ms
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