HIT 2SD2115-S, 2SD2115-L Datasheet
2SD2115(L)/(S)
Silicon NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
4
1
2
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
CBO
150 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
5V
Collector current I
C
2A
Collector peak current I
C(peak)
2.5 A
Collector power dissipation PC*
1
18 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SD2115(L)/(S)
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
150 — — V IC = 1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
60 — — V IC = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5——VI
E
= 1 mA, IC = 0
Collector cutoff current I
CBO
——10µAV
CB
= 100 V, IE = 0
DC current transfer ratio h
FE
150 — — VCE = 5 V, IC = 1.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
— — 0.8 V IC = 1.5 A, IB = 0.05 A*
1
Base to emitter saturation
voltage
V
BE(sat)
— — 1.3 V IC = 1.5 A, IB = 0.05 A*
1
Fall time t
f
— — 0.6 µsI
C
= 1.5 A, IB1 = –IB2 = 50 mA
Note: 1. Pulse test.
Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case temperature T
C
(°C)
Collector power dissipation P
C
(W)
3.0
0.3
1.0
Collector current I
C
(A)
0.1
0.03
1103 30 100
Collector to emitter voltage V
CE
(V)
Ta = 25°C,
1 shot pulse
i
C(peak)
I
C(max)
PW = 10 ms
1 ms
Area of Safe Operation
DC Operation(T
C
= 25°C)
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