HIT 2SD2107 Datasheet

Application
Low frequency power amplifier
Outline
2SD2107
Silicon NPN Triple Diffused
1. Base
2. Collector
1
2
3
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector peak current I Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
1
P
*
C
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
70 V 60 V 5V 4A 8A 2W 25
2SD2107
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current I
DC current transfer ratio h
Base to emitter voltage V Collector to emitter saturation
voltage Base to emitter saturation
voltage Notes: 1. Pulse test.
2. The 2SD2107 is grouped by h
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
BE
V
CE(sat)
V
BE(sat)
70 V IC = 10 µA, IE = 0
60 V IC = 50 mA, RBE =
5——VI
= 10 µA, IC = 0
E
——10µAVCB = 60 V, IE = 0 — 10 VCE = 50 V, RBE =
2
*
60 200 VCE = 4 V, IC = 1 A* 35 VCE = 4 V, IC = 0.1 A* — 1.0 V VCE = 4 V, IC = 1 A* — 1.0 V IC = 2 A, IB = 0.2 A*
1.2 V IC = 2 A, IB = 0.2 A*
as follows.
FE1
1
1
1
1
1
BC
60 to 120 100 to 200
Maximum Collector Dissipation Curve
30
(W)
C
20
10
Collector power dissipation P
0 50 100 150
Case temperature T
(°C)
C
Typical Output Characteristics
5
4
(A)
C
TC = 25°C
60
3
2
1
Collector current I
0
Collector to emitter voltage V
4
26810
30
50
40
P
C
20
10 mA
= 25 W
(V)
CE
2
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