HIT 2SD2106 Datasheet

Application

Low frequency power amplifier

Outline

TO-220FM

2SD2106

Silicon NPN Epitaxial

2

1

1. Base

2. Collector

1

2

3

3. Emitter
3 kΩ

(Typ)

200 Ω

(Typ)

3

I

D

2SD2106

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P

CBO

CEO

EBO

C

C(peak)

C

1

P

*

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown
voltage

Collector to emitter breakdown
voltage

Emitter to base breakdown
voltage

Collector cutoff current I

DC current transfer ratio h
Collector to emitter saturation V
voltage V
Base to emitter saturation V
voltage V

Note: 1. Pulse test.

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

I

CEO

FE

CE(sat)1

CE(sat)2

BE(sat)1

BE(sat)2

120 — — V IC = 0.1 mA, IE = 0

120 — — V IC = 25 mA, RBE = ∞

7——VI

——10µAVCB = 100 V, IE = 0
— — 10 VCE = 100 V, RBE = ∞
1000 — 20000 VCE = 3 V, IC = 3 A*
— — 1.5 V IC = 3 A, IB = 6 mA*
— — 3.0 IC = 6 A, IB = 60 mA*
— — 2.0 V IC = 3 A, IB = 6 mA*
— — 3.5 IC = 6 A, IB = 60 mA*

120 V
120 V
7V
6A
10 A
2W
25

= 50 mA, IC = 0

E

1

1

1

1

1

2

Maximum Collector Dissipation Curve

30

20

(A)

C

30

10

1.0

2SD2106

Area of Safe Operation

iC

(peak)

IC

(max)

3

DC Operation (T

1 µs

100 µs

PW = 10 ms

1 ms

10

Collector power dissipation Pc (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Output Characteristics

10

TC = 25

°C

P

C

= 25 W

8

(A)

C

6

4

Collector current I

2

0

12345

Collector to emitter voltage VCE (V)

5.0

4.5

4.0

3.5

1.5

1.0 mA

IB = 0

3.0

2.5

2.0

0.3

Ta = 25°C
1 shot pulse

Collector current I

0.1

C

= 25°C)

0.03

0.3 1.0 3 10 30 100 300
Collector to emitter voltage V

CE

(V)

DC Current Transfer Ratio

vs. Collector Current

10,000

VCE = 3 V

FE

= 75°C

C

T

25°C

Pulse

5,000

2,000

–25°C

1,000

500

DC current transfer ratio h

200

100

0.1 0.2 0.5 1.0 2 5 10
Collector current I

(A)

C

3

2SD2106

(V)

(sat)
CE

Saturation Voltage vs. Collector Current

10

(V)

(sat)

5

BE

VBE

2

(sat)

1

VCE

0.5

(sat)

200

500

lC/lB = 200

(°C/W)

j-c

Thermal resistance θ

0.2

Base to emitter saturation voltage V

Collector to emitter saturation voltage V

0.1 0.2 0.5 1.0 2 5 10
Collector current I

TC = 25°C
Pulse

(A)

C

Transient Thermal Resistance

10

3

1.0

0.3

0.1
1m 10m 100m 1.0 10 100 1000

TC = 25°C

Time t (s)

4

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

0.6

2.8 ± 0.2

2.5 ± 0.2

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

2.0 ± 0.3

0.7 ± 0.1

2.54 ± 0.52.54 ± 0.5

12.0 ± 0.3

5.0 ± 0.3

4.45 ± 0.3

2.5

Hitachi Code
JEDEC
EIAJ
Weight

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1

(reference value)

TO-220FM
—
Conforms

1.8 g

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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