HIT 2SD2106 Datasheet
Application
Low frequency power amplifier
Outline
TO-220FM
2SD2106
Silicon NPN Epitaxial
2
1
1. Base
2. Collector
1
2
3
3. Emitter
3 kΩ
(Typ)
200 Ω
(Typ)
3
I
D
2SD2106
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
1
P
*
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation V
voltage V
Base to emitter saturation V
voltage V
Note: 1. Pulse test.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
CEO
FE
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
120 — — V IC = 0.1 mA, IE = 0
120 — — V IC = 25 mA, RBE = ∞
7——VI
——10µAVCB = 100 V, IE = 0
— — 10 VCE = 100 V, RBE = ∞
1000 — 20000 VCE = 3 V, IC = 3 A*
— — 1.5 V IC = 3 A, IB = 6 mA*
— — 3.0 IC = 6 A, IB = 60 mA*
— — 2.0 V IC = 3 A, IB = 6 mA*
— — 3.5 IC = 6 A, IB = 60 mA*
120 V
120 V
7V
6A
10 A
2W
25
= 50 mA, IC = 0
E
1
1
1
1
1
2
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