HIT 2SD2101 Datasheet
Application
Low frequency power amplifier
Outline
TO-220FM
2SD2101
Silicon NPN Triple Diffused
2
1
1. Base
2. Collector
1
2
3
3. Emitter
3 kΩ
(Typ)
150 Ω
(Typ)
3
2SD2101
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
1
P
*
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation V
voltage V
Base to emitter saturation V
voltage V
Note: 1. Pulse test.
V
(BR)CBO
V
(BR)CEO
V
CEO(SUS)
V
(BR)EBO
CBO
I
CEO
FE
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
200 — — V IC = 0.1 mA, IE = 0
200 — — V IC = 25 mA, RBE = ∞
170 — — V IC = 5 A, L = 5 mH
7——VI
——10µAVCB = 180 V, IE = 0
— — 50 VCE = 180 V, RBE = ∞
1500 — — VCE = 3 V, IC = 5 A*
— — 1.5 V IC = 5 A, IB = 10 mA*
— — 3.0 IC = 10 A, IB = 100 mA*
— — 2.0 V IC = 5 A, IB = 10 mA*
— — 3.5 IC = 10 A, IB = 100 mA*
200 V
200 V
7V
10 A
15 A
2W
30
= 50 mA, IC = 0
E
1
1
1
1
1
2
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