HIT 2SD2031, 2SD2030 Datasheet
2SD2030, 2SD2031
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SD2030, 2SD2031
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SD2030 2SD2031 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base
2SD2030 V
(BR)CBO
breakdown voltage
2SD2031 200
Collector to emitter
2SD2030 V
(BR)CEO
breakdown voltage
2SD2031 200
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff
2SD2030 I
CBO
current
2SD2031 V
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter saturation
h
V
FE1
FE2
BE
CE(sat)
voltage
Gain bandwidth product f
Collector output capacitance C
T
ob
Note: 1. The 2SD2030 and 2SD2031 are grouped by h
Grade B C
h
FE1
60 to 120 100 to 200
160 — — V IC = 10 µA, IE = 0
160 — — V IC = 1 mA, RBE = ∞
5——VI
——10µAV
1
*
60 — 200 VCE = 5 V, IC = 10 mA
30 — — VCE = 5 V, IC = 1 mA
— — 1.5 V VCE = 5 V, IC = 10 mA
— — 0.5 V IC = 30 mA, IB = 3 mA
— 140 — MHz VCE = 5 V, IC = 10 mA
— 3.8 — pF VCB = 10 V, IE = 0, f = 1 MHz
160 200 V
160 200 V
55V
100 100 mA
400 400 mW
= 10 µA, IC = 0
E
= 140 V, IE = 0
CB
= 160 V, IE = 0
CB
as follows.
FE1
2
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