HIT 2SD2019 Datasheet
Application
Low frequency power amplifier
Outline
TO-126 MOD
2SD2019
Silicon NPN Epitaxial
2
3
1. Emitter
2. Collector
1
2
3
3. Base
15 kΩ
(Typ)
0.5 kΩ
(Typ)
1
I
D
2SD2019
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
C to E diode forward current ID*
1
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage V
Note: 1. Pulse test.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
CEO
FE
h
FE
h
FE
V
CE(sat)
V
BE(sat)
D
150 — — V IC = 1 mA, IE = 0
80 — — V IC = 10 mA, RBE = ∞
7——VI
——5 µAVCB = 120 V, IE = 0
——5 µAVCE = 65 V, RBE = ∞
2000 — — VCE = 2 V, IC = 0.15 A*
5000 — 30000 VCE = 2 V, IC = 1 A*
1000 — — VCE = 2 V, IC = 1.5 A*
— — 1.5 V IC = 1 A, IB = 1 mA*
— — 2.0 V IC = 1 A, IB = 1 mA*
— — 3.0 V ID = 1.5 A*
150 V
80 V
8V
1.5 A
3A
10 W
1.5 A
= 50 mA, IC = 0
E
1
1
1
1
1
1
2
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