HIT 2SD1976 Datasheet

2SD1976

Silicon NPN Triple Diffused

Application

High voltage switching, igniter

Feature

• Built-in High voltage zener diode (300 V)

• High Speed switching

Outline

TO-220AB

2

1

1. Base

2. Collector

1

2

3

(Flange)

3. Emitter

1.6 kΩ
(Typ)

160 Ω

(Typ)

3

I

D

2SD1976

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Diode current ID*
Collector peak current I
Collector power dissipation PC*

CBO

CEO

EBO

C

1

C(peak)

1

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown
voltage

Collector to emitter sustain
voltage

Emitter to base breakdown
voltage

Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation

voltage
Base to emitter saturation

voltage
Emitter to collector diode

forward voltage
Turn on time t
Storage time t
Fall time t

V

(BR)CBO

V

CEO(SUS)

V

(BR)EBO

CEO

FE

V

CE(sat)

V

BE(sat)

V

ECF

on

stg

f

300 — 420 V IC = 0.1 mA, IE = 0

300 — — V IC = 3 A, RBE = ∞, L = 10 mH

7——VI

— — 100 µAVCE = 300 V, RBE = ∞
500 — — VCE = 2 V, IC = 4 A
— — 1.5 V IC = 4 A, IB = 40 mA

— — 2.0 V IC = 4 A, IB = 40 mA

— — 3.5 V IF = 6 A

— 1.2 — µsI
— 8.0 IB1 = –IB2 = 40 mA
— 8.0 —

300 V
300 V
7V
6A
6A
10 A
40 W

= 50 mA, IC = 0

E

= 4 A, VCC = 20 V

C

2