HIT 2SD1970 Datasheet
Application
Low frequency power amplifier
Outline
TO-126 MOD
2SD1970
Silicon NPN Epitaxial
2
3
1. Emitter
2. Collector
1
2
3
3. Base
32 kΩ
(Typ)
0.4 kΩ
(Typ)
1
I
D
2SD1970
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
C to E diode forward current I
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
D
1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage V
Note: 1. Pulse test.
V
(BR)CEO
V
CEO(sus)
V
(BR)EBO
CBO
I
CEO
FE
h
FE
V
CE(sat)
V
BE(sat)
D
24 — 32 V IC = 1 mA, IE = 0
25 — 33 V IC = 1 A, L = 20 mH, RBE = ∞
7——VI
——1 µAVCB = 20 V, IE = 0
——5 µAVCE = 20 V, RBE = ∞
7000 — 30000 VCE = 2 V, IC = 0.5 A*
2000 — — — VCE = 2 V, IC = 2 A*
— — 1.5 V IC = 2 A, IB = 2 mA*
— — 2.0 V IC = 2 A, IB = 2 mA*
— — 2.0 V ID = 2 A*
24 V
24 V
7V
2A
4A
2A
10 W
= 5 mA, IC = 0
E
1
1
1
1
1
2
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