HIT 2SD1922 Datasheet
Application
Low frequency power amplifier
Outline
TO-92MOD
2SD1922
Silicon NPN Epitaxial
2
3
1. Emitter
2. Collector
3. Base
1
3
2
1
I
D
2SD1922
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current ic
E to C diode forward current I
Collector power dissipation P
CBO
CEO
EBO
C
(peak)
D
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Collector to emitter sustaining
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
E to C diode forward voltage V
Note: 1. Pulse test
V
(BR)CBO
V
(BR)CEO
V
CEO(sus)
V
(BR)EBO
CBO
I
CEO
EBO
FE
V
CE(sat)
D
25 — — V IC = 10 µA, IE = 0
25 — 35 V IC = 1 mA, RBE = ∞
25 — 35 V IC = 0.8 A, RBE = ∞,
6——VI
— — 0.2 µAV
— — 0.5 µAV
— — 0.2 µAVEB = 5 V, IC = 0
250 — 1200 V
— — 0.3 V IC = 0.8 A, IB = 80 mA*
— — 1.1 V ID = 0.8 A*
25 V
25 V
6V
0.8 A
1.5 A
0.8 A
0.9 W
L = 20 mH
= 10 µA, IC = 0
E
= 20 V, IE = 0
CB
= 20 V, RBE = ∞
CE
= 2 V, IC = 0.1 A*
CE
1
1
1
2
2SD1922
Maximum Collector Dissipation Curve
1.2
(W)
C
0.8
0.4
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Area of Safe Operation of Emitter to
Collector Diode
10
8
(A)
D
6
4
Ta = 25°C
1 Shot Pulse
Area of Safe Operation
10
3
(A)
C
1.0
i
C(peak)
I
C(max)
1 ms
PW = 10 ms
DC Operation
0.3
0.1
Collector Current I
0.03
Ta = 25°C
1 Shot Pulse
0.01
15010050
Collector to Emitter Voltage V
1.00.3 3010 10030.1
(V)
CE
Typical Output Characteristics
1.0
1.8
1.6
1.4
1.2
1.0
0.8
(A)
C
0.8
0.6
0.6
0.4
0.4
Diode Current I
2
0
1.0 100.3 30.1
Pulse Width P
(ms)
W
0.2
Collector Current I
0
Collector to Emitter Voltage V
0.2 mA
= 0
I
B
Ta = 25°
106482
(V)
CE
3
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