HIT 2SD1559 Datasheet

2SD1559
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB1079
Outline
TO-3P
2
1
1. Base
2. Collector (Flange)
3. Emitter
1
2
3
3 k
(Typ)
400
(Typ)
3
2SD1559
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector peak current I Base current I Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
B
1
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Collector to emitter sustain voltage
Emitter to base breakdown voltage
Collector cutoff current I
DC current transfer ratio h Collector to emitter saturation
voltage Base to emitter saturatiopn
voltage Collector to emitter saturation
voltage Base to emitter saturation
voltage Turn on time t Storage time t Fall time t
Note: 1. Pulse test.
V
(BR)CBO
V
(BR)CEO
V
CEO(sus)
V
(BR)EBO
CBO
I
CEO
FE
V
CE(sat)1
V
BE(sat)1
V
CE(sat)2
V
BE(sat)2
on
stg
f
100 V IC = 0.1 mA, IE = 0
100 V IC = 25 mA, RBE =
100 V IC = 200 mA, RBE = *
7——VV
100 µAVCB = 100 V, IE = 0 — 1.0 mA VCE = 80 V, RBE = 1000 20000 VCE = 3 V, IC = 10 A* — 2.0 V IC = 10 A, IB = 20 mA*
2.5 V
3.0 V IC = 20 A, IB = 200 mA*
3.5 V
1.0 µsI — 9.0 µs — 3.0 µs
100 V 100 V 7V 20 A 30 A 3A 100 W
= 50 mA, IC = 0
EB
= 10 A, I
C
= –IB2 = 20 mA
B1
1
1
1
1
2
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