HIT 2SD1527 Datasheet
Application
High voltage power amplifier
Outline
TO-220AB
2SD1527
Silicon NPN Triple Diffused
1. Base
2. Collector
1
2
3
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
C
PC*
CBO
CEO
EBO
C
1
1000 V
1000 V
5V
0.5 A
1.8 W
25 W
2SD1527
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter saturation
CBO
h
V
FE1
FE2
BE
CE (sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 5 — pF VCB = 100 V, IE = 0, f = 1 MHz
1000 — — V IC = 1 mA, RBE = ∞
5——VI
= 1 mA, IC = 0
E
——10µAVCB = 800 V, IE = 0
10 — — VCE = 5 V, IC = 10 mA
10 — — VCE = 5 V, IC = 100 mA
— — 1.2 V VCE = 5 V, IC = 100 mA
——5VI
= 300 mA, IB = 60 mA
C
— 5 — MHz VCE = 20 V, IC = 50 mA
Maximum Collector Dissipation Curve
30
20
10
Collector power dissipation Pc (W)
0 50 100 150
Case temperature T
(°C)
C
Area of Safe Operation
1.0
(50 V, 0.5 A)
(A)
C
0.1
DC Operation
Collector current I
0.01
30 100 300 1,000 3,000
Collector to emitter voltage VCE (V)
P
C
= 25 W
(600 V, 0.042 A)
(1,000 V, 0.015 A)
TC = 25°C
2
Base to Emitter Saturation Voltage
vs. Collector Current
2
(V)
(sat)
BE
IC/IB = 10
Ta = 25°C
Pulse test
1
0
Base to emitter saturation voltage V
1 2 5 10 20 50 100 200 500
Collector current IC (mA)
DC Current Transfer Ratio
vs. Collector Current
100
2SD1527
TC = 25°C
FE
VCE = 10 V
30
VCE = 5 V
10
3
DC current transfer ratio h
1 2 5 10 20 50 100 200 500
Collector current I
(mA)
C
3
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