HIT 2SD1521 Datasheet
Application
Low frequency power amplifier
Outline
TO-126 MOD
2SD1521
Silicon NPN Epitaxial
2
3
1. Emitter
2. Collector
1
2
3
3. Base
2 kΩ
(Typ)
0.5 kΩ
(Typ)
1
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CEO
EBO
C
C (peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
C to E diode forward current ID*
1
Note: 1. Value at TC = 25°C.
50 V
7V
1.5 A
3.0 A
10 W
1.5 A
I
D
2SD1521
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
[VZ]
50 60 70 V I
(Zener breakdown voltage)
Emitter to base breakdown
V
(BR)EBO
7——VI
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation V
voltage V
Base to emitter saturation V
voltage V
C to E diode forward voltage V
CEO
FE
CE (sat)1
CE (sat)2
BE (sat)1
BE (sat)2
D
——10µAVCE = 50 V, RBE = ∞
2000 — 30000 VCE = 3 V, IC = 1 A*
— — 1.5 V IC = 1 A, IB = 1 mA*
— — 2.0 V IC = 1.5 A, IB = 1.5 mA*
— — 2.0 V IC = 1 A, IB = 1 mA*
— — 2.5 V IC = 1.5 A, IB = 1.5 mA*
— — 3.0 V ID = 1.5 A
Turn on time Ton — 0.5 — µsI
Turn off time Toff — 2.0 — µs
Note: 1. Pulse test.
= 0.1 mA, IE = 0
C
= 50 mA, IC = 0
E
= 1 A, IB1 = –IB2 = 1 mA
C
1
1
1
1
1
Maximum Collector Dissipation Curve
15
10
5
Collector power dissipation Pc (W)
0 50 100 150
Case temperature T
(°C)
C
Area of Safe Operation
10
(A)
C
1.0
0.3
iC
(peak)
3
IC
(max)
DC (T
1 µs
PW = 10 ms
1 ms
C
= 25°C)
0.1
Collector current I
0.03
Ta = 25°C
1 shot pulse
0.01
3 10 30 100 300
Collector to emitter voltage V
100 µs
(V)
CE
2
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