HIT 2SD1504 Datasheet
Application
Low frequency amplifier, Muting
Outline
SPAK
2SD1504
Silicon NPN Epitaxial
1
2
3
1. Emitter
2. Collector
3. Base
2SD1504
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current ic
Collector power dissipation P
CBO
CEO
EBO
C
(peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
CBO
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter saturation
V
BE
CE(sat)
voltage
V
CE(sat)
Gain bandwidth product f
On resistance r
T
on
Notes: 1. The 2SD1504 is grouped by hFE as follows.
2. Pulse test
DEF
250 to 500 400 to 800 600 to 1200
30 — — V IC = 10 µA, IE = 0
15 — — V IC = 1 mA, RBE = ∞
5——VI
——10µAV
1
250 — 1200 V
— 0.65 — V V
— 0.15 0.5 V IC = 500 mA, IB = 50 mA*
— 0.018 — V IC = 30 mA, IB = 3 mA
— 300 — MHz V
— 0.5 — Ω IB = 2 mA
30 V
15 V
5V
0.5 A
1.0 A
300 mW
= 10 µA, IC = 0
E
= 20 V, IE = 0
CB
= 1 V, IC = 150 mA*
CE
= 1 V, IC = 150 mA
CE
= 1 V, IC = 50 mA
CE
2
2
2
2SD1504
Maximum Collector Dissipation Curve
300
(mW)
C
200
100
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Typical Output Characteristics
100
80
(mA)
C
60
40
20
Collector Current I
160
140
120
100
80
60
40
IB = 20 µA
Typical Output Characteristics
10
8
(mA)
C
6
15.0
12.5
10.0
4
7.5
5.0
2
Collector Current I
15010050
0
286104
Collecter to Emitter Voltage V
IB = 2.5 µA
CE
(V)
Typical Transfer Characteristics
10
VCE = 1 V
8
(mA)
C
6
4
2
Collector Current I
0
0.2 0.80.6 1.00.4
Collector to Emitter Voltage V
CE
(V)
0
Base to Emitter Voltage V
BE
1.00.2 0.4 0.6 0.8
(V)
3
Loading...