HIT 2SD1490 Datasheet
Silicon NPN Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SB1059
Outline
TO-92 (1)
2SD1490
1. Emitter
2. Collector
3. Base
3
2
1
2SD1490
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 20 — pF V
Note: 1. The 2SD1490 is grouped by hFE as follows.
BCD
100 to 200 160 to 320 250 to 500
70 — — V IC = 10 µA, IE = 0
50 — — V IC = 1 mA, RBE = ∞
6——VI
——1 µAV
— — 0.2 µAV
1
100 — 500 V
— — 0.3 V IC = 1 A, IB = 0.1 A
— 80 — MHz V
70 V
50 V
6V
1A
0.75 W
= 10 µA, IC = 0
E
= 80 V, IE = 0
CB
= 6 V, IC = 0
EB
= 2 V, IC = 0.1 A
CE
= 2 V, IC = 10 mA
CE
= 10 V, IE = 0, f = 1 MHz
CB
See characteristic curves of 2SD789.
2
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