HIT 2SD1489 Datasheet
Silicon NPN Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SB1058
Outline
TO-92 (1)
2SD1489
1. Emitter
2. Collector
3. Base
3
2
1
2SD1489
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 20 — pF VCB = 10 V, IE = 0, f = 1 MHz
Note: 1. The 2SD1489 is grouped by hFE as follows.
BCD
100 to 200 160 to 320 250 to 500
20 — — V IC = 10 µA, IE = 0
16 — — V IC = 1 mA, RBE = ∞
6——VI
——2 µAV
— — 0.2 µAV
1
100 — 500 V
— — 0.3 V IC = 1 A, IB = 0.1 A
— 80 — MHz V
20 V
16 V
6V
2A
0.75 W
= 10 µA, IC = 0
E
= 16 V, IE = 0
CB
= 6 V, IC = 0
EB
= 2 V, IC = 0.1 A
CE
= 2 V, IC = 10 mA
CE
See characteristic curves of 2SD787.
2
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