HIT 2SD1472 Datasheet
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Outline
UPAK
2SD1472
0.5 kΩ
(Typ)
2
I
D
3
1
2
3
1
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2 kΩ
(Typ)
2SD1472
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
*
2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
E to C diode forward current I
D
Notes: 1. Pluse ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
E to C diode forward voltage V
Notes: 1. Pulse test
2. Marking is “CT”.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
CEO
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
D
120 — — V IC = 0.1 mA, IE = 0
120 — — V IC = 10 mA, RBE = ∞
7——VI
— — 1.0 µAV
——10µAV
2000 — 30000 V
— — 1.5 V IC = 1 A, IB = 1 mA*
— — 2.0 V IC = 1.5 A, IB = 1.5 mA*
— — 2.0 V IC = 1 A, IB = 1 mA*
— — 2.5 V IC = 1.5 A, IB = 1.5 mA*
— — 3.0 V ID = 1.5 A*
120 V
120 V
7V
1.5 A
3.0 A
1.0 W
1.5 A
= 50 mA, IC = 0
E
= 100 V, IE = 0
CB
= 100 V, RBE = ∞
CE
= 3 V, IC = 1 A*
CE
1
1
1
1
1
1
2
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