HIT 2SD1471 Datasheet
Application
High gain amplifier
Outline
UPAK
3
2SD1471
Silicon NPN Planar, Darlington
1
2
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
1
3
2SD1471
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
*
2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Pulse ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
I
h
h
V
CBO
CEO
FE1
FE2
FE3
CE(sat)
voltage
Base to emitter saturation
V
BE(sat)
voltage
Notes: 1. The 2SD1471 is grouped by hFE as follows.
2. Pulse test
Mark DT ET
h
FE1
h
FE2
h
FE3
2000 to 100000 5000 to 100000
3000 min 10000 min
3000 min 10000 min
40 — — V IC = 10 µA, IE = 0
30 — — V IC = 1 mA, RBE = ∞
10 — — V IE = 10 µA, IC = 0
——1 µAV
——10µAV
1
*
2000 — 100000 V
1
*
3000 — — V
1
*
3000 — — V
— — 1.5 V IC = 100 mA, IB = 0.1 mA*
— — 2.0 V IC = 100 mA, IB = 0.1 mA*
40 V
30 V
10 V
300 mA
500 mA
1W
= 30 V, IE = 0
CB
= 24 V, RBE = ∞
CE
= 5 V, IC = 10 mA*
CE
= 5 V, IC = 100 mA*
CE
= 5 V, IC = 400 mA*
CE
2
2
2
2
2
2
Loading...