HIT 2SD1436K Datasheet
2SD1436(K)
Silicon NPN Triple Diffused
Application
Power switching complementary pair with 2SB1032(K)
Outline
TO-3P
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
1.5 kΩ
(Typ)
130 Ω
(Typ)
1
2
3
2SD1436(K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
CBO
120 V
Collector to emitter voltage V
CEO
120 V
Emitter to base voltage V
EBO
7V
Collector current I
C
10 A
Collector peak current I
C (peak)
15 A
Collector power dissipation PC*
1
80 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120 — — V IC = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7——VI
E
= 200 mA, IC = 0
Collector cutoff current I
CBO
— — 100 µAV
CB
= 120 V, IE = 0
I
CEO
——10µAV
CE
= 100 V, RBE = ∞
DC current transfer ratio h
FE
1000 — 20000 VCE = 3 V, IC = 5 A*
1
Collector to emitter saturation V
CE (sat)1
— — 1.5 V IC = 5 A, IB = 10 mA*
1
voltage V
CE (sat)2
— — 3.0 V IC = 10 A, IB = 0.1 A*
1
Base to emitter saturation V
BE (sat)1
— — 2.0 V IC = 5 A, IB = 10 mA*
1
voltage V
BE (sat)2
— — 3.5 V IC = 10 A, IB = 0.1 A*
1
Turn on time Ton — 0.8 — µsI
C
= 5 A, IB1 = –IB2 = 10 mA
Turn off time Toff — 4.0 — µs
Note: 1. Pulse test.
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