HIT 2SD1421 Datasheet
Application
Low frequency power amplifier
Outline
UPAK
3
2SD1421
Silicon NPN Epitaxial
1
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1421
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
*
2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
h
V
CBO
FE1
FE2
CE(sat)
voltage
Base to emitter voltage V
BE
Note: 1. The 2SD1421 is grouped by h
Mark ED EE
h
FE1
60 to 120 100 to 200
180 — — V IC = 1 mA, IE = 0
160 — — V IC = 10 mA, RBE = ∞
5——VI
——10µAV
1
*
60 — 200 V
30 — — V
— — 1.0 V IC = 0.5 A, IB = 50 mA, Pulse
— — 0.9 V V
as follows.
FE1
180 V
160 V
5V
1.5 A
3A
1W
= 1 mA, IC = 0
E
= 160 V, IE = 0
CB
= 5 V, IC = 0.15 A
CE
= 5 V, IC = 0.5 A
CE
= 5 V, IC = 0.15 A, Pulse
CE
2
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