HIT 2SD1418 Datasheet
Silicon NPN Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SB1025
Outline
UPAK
2SD1418
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1418
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
*
2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
h
V
CBO
FE1
FE2
CE(sat)
voltage
Base to emitter voltage V
Gain bandwidth product f
BE
T
Collector output capacitance Cob — 12 — pF VCB = 10 V, IE = 0, f = 1 MHz
Notes: 1. The 2SD1418 is grouped by h
2. Pulse test
Mark DA DB DC
h
FE1
60 to 120 100 to 200 160 to 320
120 — — V IC = 10 µA, IE = 0
80 — — V IC = 1 mA, RBE = ∞
5——VI
——10µAV
1
*
60 — 320 V
30 — — V
——1VI
— — 1.5 V V
— 140 — MHz V
as follows.
FE1
120 V
80 V
5V
1A
2A
1W
= 10 µA, IC = 0
E
= 100 V, IE = 0
CB
= 5 V, IC = 150 mA*
EB
= 5 V, IC = 500 mA*
CE
= 500 mA, IB = 50 mA*
C
= 5 V, IC = 150 mA*
CE
= 5 V, IC = 150 mA*
CE
2
2
2
2
2
2
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