Silicon NPN Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SB1025
Outline
UPAK
2SD1418
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1418
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
*
2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
h
V
CBO
FE1
FE2
CE(sat)
voltage
Base to emitter voltage V
Gain bandwidth product f
BE
T
Collector output capacitance Cob — 12 — pF VCB = 10 V, IE = 0, f = 1 MHz
Notes: 1. The 2SD1418 is grouped by h
2. Pulse test
Mark DA DB DC
h
FE1
60 to 120 100 to 200 160 to 320
120 — — V IC = 10 µA, IE = 0
80 — — V IC = 1 mA, RBE = ∞
5——VI
——10µAV
1
*
60 — 320 V
30 — — V
——1VI
— — 1.5 V V
— 140 — MHz V
as follows.
FE1
120 V
80 V
5V
1A
2A
1W
= 10 µA, IC = 0
E
= 100 V, IE = 0
CB
= 5 V, IC = 150 mA*
EB
= 5 V, IC = 500 mA*
CE
= 500 mA, IB = 50 mA*
C
= 5 V, IC = 150 mA*
CE
= 5 V, IC = 150 mA*
CE
2
2
2
2
2
2
2SD1418
Maximum Collector Dissipation Curve
1.2
(W)
C
0.8
0.4
(on the alumina ceramic board)
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
500
VCE = 5 V
200
100
(mA)
C
50
20
Ta = 75°C
10
5
Collector Current I
2
1
0 0.4 0.80.2 0.6 1.0
Base to Emitter Voltage V
25
–25
BE
(V)
Typical Output Characteristics
(A)
C
1.0
0.8
0.6
35
25
30
20
15
10
5
0.4
Collector Current I
0.2
2
1
0.5 mA
IB = 0
15010050
0
Collector to Emitter Voltage V
841062
(V)
CE
DC Current Transfer Ratio vs. Collector Current
300
VCE = 5 V
FE
250
200
150
Ta = 75°C
25
–25
100
50
DC Current Transfer Ratio h
0
10 100 1,00030 30031
Collector Current I
(mA)
C
3
2SD1418
0.6
(V)
CE(sat)
0.5
Saturation Voltage vs. Collector Current
1.2
IC = 10 I
(V)
1.0
BE(sat)
Pulse
B
0.4
0.3
0.2
0.1
Collector to Emitter Saturation Voltage V
0.8
0.6
0.4
0.2
Base to Emitter Saturation Voltage V
0
0
Gain Bandwidth Product vs. Collector Current
240
VCE = 5 V
Pulse
200
(MHz)
T
160
120
80
40
Gain Bandwidth Product f
0
10 30 100 300 1,000
Collector Current I
(mA)
C
V
BE(sat)
V
CE(sat)
10 100 1,00030 30031
Collector Current I
(mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
200
(pF)
f = 1 MHz
= 0
I
E
100
ob
50
20
10
5
Collector Output Capacitance C
2
250105 20 1001
Collector to Base Voltage V
CB
(V)
4
Unit: mm
0.53 Max
0.48 Max
4.5 ± 0.1
1.8 Max
1.5
1.5
3.0
1.5 ± 0.1
0.4
φ
1
0.44 Max
(1.5)
(2.5)
2.5 ± 0.1
4.25 Max
0.44 Max
(0.4)
(0.2)
0.8 Min
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
UPAK
—
Conforms
0.050 g
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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