HIT 2SD1376K Datasheet
2SD1376(K)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1012(K)
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
1
2
3
6 kΩ
(Typ)
0.5 kΩ
(Typ)
I
D
3
2
1
2SD1376(K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
CBO
120 V
Collector to emitter voltage V
CEO
120 V
Emitter to base voltage V
EBO
7V
Collector current I
C
1.5 A
Collector peak current I
C (peak)
3.0 A
Collector power dissipation PC*
1
20 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
C to E diode forward current ID*
1
1.5 A
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120 — — V IC = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7——VI
E
= 50 mA, IC = 0
Collector cutoff current I
CBO
— — 100 µAV
CB
= 120 V, IE = 0
I
CEO
——10µAV
CE
= 100 V, RBE = ∞
DC current transfer ratio h
FE
2000 — 30000 VCE = 3 V, IC = 1 A*
1
Collector to emitter saturation V
CE (sat)1
— — 1.5 V IC = 1 A, IB = 1 mA*
1
voltage V
CE (sat)2
— — 2.0 V IC = 1.5 A, IB = 1.5 mA*
1
Base to emitter saturation V
BE (sat)1
— — 2.0 V IC = 1 A, IB = 1 mA*
1
voltage V
BE (sat)2
— — 2.5 V IC = 1.5 A, IB = 1.5 mA*
1
C to E diode forward voltage V
D
— — 3.0 V ID = 1.5 A*
1
Turn on time Ton — 0.5 — µsI
C
= 1 A, IB1 = –IB2 = 1 mA
Turn off time Toff — 2.0 — µs
Note: 1. Pulse test.
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