HIT 2SD1367 Datasheet
Silicon NPN Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SB1001
Outline
UPAK
2SD1367
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1367
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
*
2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%.
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Base to emitter saturation
V
BE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 20 — pF V
Note: 1. The 2SD1367 is grouped by hFE as follows.
Mark BA BB BC
h
FE
100 to 200 160 to 320 250 to 500
20 — — V IC = 10 µA, IE = 0
16 — — V IC = 1 mA, RBE = ∞
6——VI
— — 0.1 µAV
— 0.1 µAV
1
100 — 500 V
— 0.15 0.3 V IC = 1 A, IB = 0.1 A, Pulse
— 0.9 1.2 V IC = 1 A, IB = 0.1 A, Pulse
— 100 — MHz V
20 V
16 V
6V
2A
3A
1W
= 10 µA, IC = 0
E
= 16 V, IE = 0
CB
= 5 V, IC = 0
EB
= 2 V, IC = 0.1 A, Pulse
CE
= 2 V, IC = 10 mA
CE
= 10 V, IE = 0, f = 1 MHz
CB
2
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